Bruckewell Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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KBP200 - KBP210 PRV : 50 - 1000 Volts Io : 2.0 Amperes Features • High case dielectric strength • High surge current capability • High reliability • L

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SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication

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MUR1605CT-1660CT Super Fast Rectifiers Features • Low forward voltage drop. • High current capability. • Lead free product, compliance to RoHS • Low l

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MB22S-210S Surface Mount Schottky Bridge Rectifiers REVERSE VOLTAGE: 20 - 100 V Features • High Temperature Soldering Guaranteed:260 C/10 Second • Sav

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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TA114ECA-TA144ECA Digital Transistor Features • Epitaxial planar die construction. • Complementary NPN types available (DTC). • Built-in biasing resis

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BSS123 N-Channel ENHANCEMENT MODE MOSFET Description These N-Channel enhancement mode field effect transistors uses advanced trench technology. Th

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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MB005-MB010 PRV : 50 - 1000 Volts Io : 1.0 Ampere Features • High current capability • High surge current capability • High reliability • Low reverse

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

(10 views)

3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

(10 views)

3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

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2SA1162 Silicon PNP Epitaxial Type Transistor Features • High voltage and high current: VCEO = -50 V, IC = 150 mA (max) • Low noise: NF = 1dB (typ.),

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P4SMA Transient Voltage Suppressor VBR : 6.8 - 440 Volts PPK : 400 Watts Features • 400W surge capability at 1ms • Excellent clamping capability

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3.0SMCJ_5.0_220A Stand-off Voltage : 5.0 to 220V Peak Pulse Power : 3000 W Features • 3000W peak pulse power capability with a 10/1000μs waveform • Ex

(10 views)