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MSF10N80A - 800V N-Channel MOSFET

MSF10N80A Description

MSF10N80A 800V N-Channel MOSFET .

MSF10N80A Features

* Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS ID IDM

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Datasheet Details

Part number
MSF10N80A
Manufacturer
Bruckewell
File Size
1.25 MB
Datasheet
MSF10N80A-Bruckewell.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Bruckewell
Bruckewell MSF10N80A-like datasheet