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FQPF30N06 - 60V N-Channel MOSFET

FQPF30N06 Description

FQPF30N06 May 2001 QFET FQPF30N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF30N06 Features

* 21A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO

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