FQPF33N10L - N-Channel MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQPF33N10L Features
* 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 70 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise no
