FQPF3N80C

N-Channel MOSFET

onsemi

FQPF3N80C Features

* 3.0 A, 800 V, RDS(on) = 4.8 W (Max.) @ VGS = 10 V, ID = 1.5 A

* Low Gate Charge (Typ. 13 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested DATA SHEET www.onsemi.com TO

* 220

* 3LD CASE 340AT TO

* 220 Fullpack, 3

* Lead / TO

* 220F

FQPF3N80C General Description

This N *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQPF3N80C Datasheet (425.84 KB)

FQPF3N80C Datasheet Preview — Preview of FQPF3N80C PDF

Datasheet Details

Part number:

FQPF3N80C

Manufacturer:

onsemi

File Size:

425.84 KB

Description:

N-channel mosfet.

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FQPF3N80C N-Channel MOSFET onsemi

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FQPF3N80C Features

FQPF3N80C General Description

Datasheet Details

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Description:

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