FQPF30N06L Datasheet - Fairchild Semiconductor

FQPF30N06L 60V LOGIC N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF30N06L Features

* 22.5 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS=10 V, ID = 11.3 A

* Low Gate Charge (Typ. 15 nC)

* Low Crss (Typ. 50 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise n

FQPF30N06L_FairchildSemiconductor.pdf