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FQPF47P06YDTU

P-Channel MOSFET

FQPF47P06YDTU Features

* 30 A,

* 60 V, RDS(on) = 26 mW (Max.) @ VGS =

* 10 V, ID =

* 15 A

* Low Gate Charge (Typ. 84 nC)

* Low Crss (Typ. 320 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS

FQPF47P06YDTU General Description

This P

*Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanche energy s.

FQPF47P06YDTU Datasheet (312.56 KB)

Preview of FQPF47P06YDTU PDF

Datasheet Details

Part number:

FQPF47P06YDTU

Manufacturer:

ON Semiconductor ↗

File Size:

312.56 KB

Description:

P-channel mosfet.

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FQPF47P06YDTU P-Channel MOSFET ON Semiconductor

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