FQPF47P06 P-Channel MOSFET

Fairchild Semiconductor

Description

FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ .
P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features. -30 A, -60 V, RDS(on)=26 mΩ(Max. Low Gate Charg.

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Datasheet Specifications

Part number: FQPF47P06
Manufacturer: Fairchild Semiconductor
File Size: 761.59 KB
Datasheet: FQPF47P06-FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -30 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-15 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating This P-Channel enhancement mode power MOSFET is produced using Fairchild Semic

Applications

* S !
* G! ▶ ▲
* GD S TO-220F ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1)

FQPF47P06 Distributors

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FQPF47P06 P-Channel MOSFET Fairchild Semiconductor

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