Description
FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET March 2013 -60 V, -30 A, 26 mΩ .
P-Channel QFET® MOSFET
FQPF47P06 / FQPF47P06YDTU
Features.
-30 A, -60 V, RDS(on)=26 mΩ(Max.
Low Gate Charg.
Features
* -30 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-15 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semic
Applications
* S
!
* G!
▶ ▲
* GD S
TO-220F
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)