FQPF4N60C Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 15nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 2.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested Package: TO
Datasheet Details
FQPF4N60C, FQP4N60C
HAOHAI
501.22 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: FQPF4N60C, FQP4N60C.
Please refer to the document for exact specifications by model.
FQPF4N60C Distributor
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