FQPF4N80 Datasheet (Fairchild Semiconductor)

FQPF4N80, 800V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQPF4N80 Features

* 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 8.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S 3 " " 5 TO-220F FQPF Series ! S Absolute Maximum Rating