Part number:
FQPF4N90
Manufacturer:
Fairchild Semiconductor
File Size:
621.35 KB
Description:
900v n-channel mosfet.
FQPF4N90_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQPF4N90 Features
* 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F IRFS Series ! S Absolute Maximum Ra
FQPF4N90_FairchildSemiconductor.pdf
Datasheet Details
FQPF4N90
Fairchild Semiconductor
621.35 KB
900v n-channel mosfet.
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