FQPF4N90 Datasheet - Fairchild Semiconductor

FQPF4N90 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF4N90 Features

* 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F IRFS Series ! S Absolute Maximum Ra

FQPF4N90_FairchildSemiconductor.pdf