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FQPF4N90C, FQP4N90C - 900V N-Channel MOSFET

FQPF4N90C Description

FQP4N90C / FQPF4N90C * N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQPF4N90C Features

* 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max. ) @ VGS = 10 V, ID = 2.0 A
* Low Gate Charge (Typ. 17 nC)
* Low Crss (Typ. 5.6 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FQPF4N90C, FQP4N90C. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FQPF4N90C, FQP4N90C
Manufacturer
Fairchild Semiconductor
File Size
1.18 MB
Datasheet
FQP4N90C_FairchildSemiconductor.pdf
Description
900V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: FQPF4N90C, FQP4N90C.
Please refer to the document for exact specifications by model.

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQPF4N90C-like datasheet