FQPF8N60C Datasheet - Fairchild Semiconductor

FQPF8N60C, 600V N-Channel MOSFET

FQPF8N60C * N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A
* Low Gate Charge (Typ. 28 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Volta

FQPF8N60C_FairchildSemiconductor.pdf