Datasheet4U Logo Datasheet4U.com

FQPF8N60C

600V N-Channel MOSFET

FQPF8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Volta

FQPF8N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQPF8N60C Datasheet (889.97 KB)

Preview of FQPF8N60C PDF

Datasheet Details

Part number:

FQPF8N60C

Manufacturer:

Fairchild Semiconductor

File Size:

889.97 KB

Description:

600v n-channel mosfet.

📁 Related Datasheet

FQPF8N60 N-Channel Mosfet Transistor (Inchange Semiconductor)

FQPF8N60 600V N-Channel MOSFET (AOKE)

FQPF8N60 8A N-Channel MOSFET (OuCan)

FQPF8N60CF 600V N-Channel MOSFET (Fairchild Semiconductor)

FQPF8N50 9A N-Channel MOSFET (OuCan)

FQPF8N80 7.4A N-Channel MOSFET (Oucan Semi)

FQPF8N80C 800V N-Channel MOSFET (Fairchild Semiconductor)

FQPF8N90C 900V N-Channel MOSFET (Fairchild Semiconductor)

FQPF8N90C N-Channel MOSFET (ON Semiconductor)

FQPF85N06 60V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

FQPF8N60C 600V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FQPF8N60C Datasheet Preview Page 2 FQPF8N60C Datasheet Preview Page 3

FQPF8N60C Distributor