FQPF8N80C Datasheet - Fairchild Semiconductor

FQPF8N80C, 800V N-Channel MOSFET

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU * N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

* 8.0 A, 800 V, RDS(on) = 1.55 Ω (Max. ) @ VGS = 10 V, ID = 4.0 A
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 13 pF)
* 100% Avalanche Tested D GDS TO-220 GDS D G TO-220F S G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbo

FQPF8N80C_FairchildSemiconductor.pdf