FQPF8N60 Datasheet - Inchange Semiconductor

FQPF8N60 N-Channel Mosfet Transistor

FQPF8N60 Features

* Drain Current

* ID= 7.5A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)

* Avalanche Energy Specified

* Fast Switching

* Simple Drive Requirements

* DESCRITION

* Designed for high efficiency switch mode pow

Datasheet Details

FQPF8N60

Inchange Semiconductor

156.17 KB

N-channel mosfet transistor.

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