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FQPF13N10 - 100V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQPF13N10
Manufacturer: Fairchild Semiconductor
File Size: 617.87 KB
Datasheet: FQPF13N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

FQPF13N10 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

8.7A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

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100V N-Channel MOSFET Fairchild Semiconductor

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