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FQPF13N06 60V N-Channel MOSFET

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Description

FQPF13N06 May 2001 QFET FQPF13N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number
FQPF13N06
Manufacturer
Fairchild Semiconductor
File Size
660.44 KB
Datasheet
FQPF13N06_FairchildSemiconductor.pdf
Description
60V N-Channel MOSFET

Features

* 9.4A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " "

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