FQPF13N06L Datasheet - Fairchild Semiconductor

FQPF13N06L 60V LOGIC N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF13N06L Features

* 10 A, 60 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 5 A

* Low Gate Charge (Typ. 4.8 nC)

* Low Crss (Typ. 17 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise n

FQPF13N06L_FairchildSemiconductor.pdf