60V Datasheet | Specifications & PDF Download

FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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SLP65R170E7/SLF65R170E7 SLP65R170E7 / SLF65R170E7 650V N-Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced

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RSD150N06FRA 　　 Nch 60V 15A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 40mΩ ±15A 20W lFeatures 1) Low on - resistance 2) Fast switchin

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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TPP60508 60-V, 5-A, Non-Synchronous Step-Down DC/DC Converter Features • High Efficiency at Light Loads with Pulse Skipping • 80-mΩ High-Side MOSFET

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® TDA7296S 60V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±30V) DMOS POWER STAGE HIGH OUTPUT POWER (THD = 10%, UP

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JW5121 Parameters Subject to Change Without Notice 60V/2A Asynchronous Step-Down Converter DESCRIPTION The JW®5121 is a current mode monolithic buc

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OC5864 MOSFET 。OC5864 5.5-60V 0.6 A ， 。 OC5864 PWM ， 。 OC5864 。 OC5864 SOT23-6 ， 。 OC5864 0.6A，60V，500kHz  0.6A  0.9Ω MOSFET   ESR

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IPT008N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB

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www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On

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ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 2W Complementary part number ZXTP5401G Desc

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Datasheet 180KHz 60V 5A Switching Current Boost DC/DC Converter XL6019 Features  Wide 5V to 40V Input Voltage Range  Positive or Negative Output

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120N06N-VB TO220 120N06N-VB TO220 Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS

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IPA060N06NM5S MOSFET OptiMOSTM 5 Power-Transistor, 60 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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LTC7003 Fast 60V Protected High Side NMOS Static Switch Driver FEATURES nn Wide Operating VIN: 3.5V to 60V nn 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Tur

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STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ■ High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio (no cr

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Datasheet 400KHz 60V 2A Switching Current Boost DC/DC Converter XL6007 Features  Wide 3.6V to 24V Input Voltage Range  Positive or Negative Outpu

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AIM7DT3AR60V3 Intelligent Power Module External View Top View 1 Bottom View 11 21 12 Size: 17.9 x 7.5 x 2.5 mm Features • 600V-3A • Fully functi

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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