60V Datasheet | Specifications & PDF Download

Datasheet 400KHz 60V 2A Switching Current Boost DC/DC Converter XL6007 Features  Wide 3.6V to 24V Input Voltage Range  Positive or Negative Outpu

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FDD5614P March 2015 FDD5614P 60V P-Channel PowerTrench® MOSFET General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTre

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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BM BM0150HV 60V Buck Converter DESCRIPTION APPLICATIONS BM0150HV is the monolithic IC designed for DC/DC LED driver applications step-down LED d

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IPT008N06NM5LF MOSFET OptiMOSTM 5 Linear FET, 60 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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CMD20N06L/CMU20N06L 60V N-Channel MOSFET General Description The 20N06 combines advanced trench MOSFET technology .This advanced technology has been

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Chip Integration Technology Corporation 2N7002D 60V N-Channel MOSFET N-Channel MOSFET – ESD Protected Features: ● Simple Drive Requirement ● Small

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LC 1209 60V Input / 5V Output Linear Regulator DESCRIPTION LC1209 is a three-terminal positive regulator with an output voltage of 5.0V and output cur

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AOD2606/AOI2606 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-swi

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NDS9948 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s adva

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AOY66620 60V N-Channel AlphaSGT TM General Description • Trench Power MOSFET technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product(FOM)

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JW5121 Parameters Subject to Change Without Notice 60V/2A Asynchronous Step-Down Converter DESCRIPTION The JW®5121 is a current mode monolithic buc

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FDM4061 - High Performance 60V Smart Power Stage Module September 2016 FDMF4061 – High Performance 60V Smart Power Stage Module Features  Compact

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot 60V Electrical

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FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 1

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FDC5612 May 1999 FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the

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FDS4559 April 2002 FDS4559 60V Complementary PowerTrenchMOSFET General Description This complementary MOSFET device is produced using Fairchild’s a

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FQA65N06 May 2001 QFET FQA65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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