ZXTN5551G 160V - SOT223 / NPN high voltage transistor

Diodes

Description

ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC(cont) = 600mA PD = 2W Complementary part number ZXTP5401G Desc.
A high voltage NPN transistor in a high power dissipation surface mount package C Features. 160V rating SOT223 package B E App.

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Datasheet Specifications

Part number: ZXTN5551G
Manufacturer: DIODES ↗
File Size: 363.53 KB
Datasheet: ZXTN5551G_Diodes.pdf
Description: 160V - SOT223 / NPN high voltage transistor

Applications

* High voltage amplification E C Tape width (mm) 12 12 Quantity per reel 1000 4000 Ordering information Device ZXTN5551GTA ZXTN5551GTC Reel size (inches) 7 13 C B Pinout - top view Device marking ZXTN 5551 www. DataSheet4U. com Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 ww

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ZXTN5551G 160V SOT223 NPN high voltage transistor Diodes

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