ZXTN04120HP5 Datasheet, transistor equivalent, Diodes

ZXTN04120HP5 Features and benefits

ZXTN04120HP5 Application

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📁 Related Datasheet

ZXTN04120HFF - NPN Transistor (Zetex Semiconductors)
ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC(cont) = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part.

ZXTN04120HK - 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR (Diodes)
A Product Line of Diodes Incorporated ZXTN04120HK 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252 Features  BVCEO > 120V  BVCBO > 140V  IC = .

ZXTN07012EFF - NPN Transistor (Zetex Semiconductors)
ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W.

ZXTN07045EFF - 45V NPN LOW SATURATION TRANSISTOR (Diodes)
ZXTN07045EFF 45V NPN LOW SATURATION TRANSISTOR Features  BVCEO > 45V  IC = 4A Continuous Collector Current  Low Saturation Voltage VCE(sat) < 80mV.

ZXTN08400BFF - NPN Transistor (Zetex Semiconductors)
ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC(cont) = 0.5A VCE(sat) < 175mV @ 50.

ZXTN08400BNS - 400V DUAL NPN MEDIUM POWER TRANSISTORS (DIODES)
ZXTN08400BNS 400V DUAL NPN MEDIUM POWER TRANSISTORS IN PowerDI3333-8 Features  Dual NPN with Common-Collector  BVCEO > 400V  IC = 0.5A Continuous .

ZXTN10150DZ - 150V NPN LED DRIVING TRANSISTOR (DIODES)
A Product Line of Diodes Incorporated ZXTN10150DZ 150V NPN LED DRIVING TRANSISTOR IN SOT89 Features • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA.

ZXTN19020CFF - 20V NPN HIGH GAIN POWER TRANSISTOR (Diodes)
ZXTN19020CFF 20V NPN HIGH GAIN POWER TRANSISTOR IN SOT23F Features  BVCEO > 20V  BVCEX > 65V  BVECO > 4.5V  IC = 7A Continuous Collector Current .

ZXTN19020DFF - NPN HIGH GAIN POWER TRANSISTOR (DIODES)
ZXTN19020DFF 20V NPN HIGH GAIN POWER TRANSISTOR Features  BVCEO > 20V  IC = 6.5A Continuous Collector Current  Very Low Saturation Voltage VCE(sat.

ZXTN19020DG - 20V NPN high gain transistor (DIODES)
Features  BVCEX > 70V  BVCEO > 20V  BVECO > 4.5V  IC = 9A High Continuous Current  Low Saturation Voltage VCE(sat) < 35mV @ 1A  RCE(sat) = 20mΩ .