FQPF12N60C N-Channel MOSFET

Fairchild Semiconductor

Description

FQPF12N60C * N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

📥 Download Datasheet

FQPF12N60C Datasheet Preview — Preview of FQPF12N60C PDF

Datasheet Specifications

Part number: FQPF12N60C
Manufacturer: Fairchild Semiconductor
File Size: 1.15 MB
Datasheet: FQPF12N60C_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 12 A, 600 V, RDS(on) = 650 mΩ (Max. ) @ VGS = 10 V, ID = 6 A
* Low Gate Charge (Typ. 48 nC)
* Low Crss (Typ. 21 pF)
* 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM Drain-Source

FQPF12N60C Distributors

📁 Related Datasheet

FQPF12N60 FQPF12N65 FQPF12N65C FQPF12N50 FQPF10N20C FQPF10N60

📌 All Tags

FQPF12N60C N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FQPF12N60C-like datasheet