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FQPF6N90 Datasheet - Fairchild Semiconductor

FQPF6N90 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF6N90 Features

* 3.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings S

FQPF6N90_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQPF6N90

Manufacturer:

Fairchild Semiconductor

File Size:

680.05 KB

Description:

900v n-channel mosfet.

FQPF6N90 Distributor

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FQPF6N90 FQPF6N90 900V N-Channel MOSFET Fairchild Semiconductor