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FQPF7N10

100V N-Channel MOSFET

FQPF7N10 Features

* 5.5A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " "

FQPF7N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQPF7N10 Datasheet (547.71 KB)

Preview of FQPF7N10 PDF

Datasheet Details

Part number:

FQPF7N10

Manufacturer:

Fairchild Semiconductor

File Size:

547.71 KB

Description:

100v n-channel mosfet.

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TAGS

FQPF7N10 100V N-Channel MOSFET Fairchild Semiconductor

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