FQPF7N60 Datasheet - Fairchild Semiconductor

FQPF7N60 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQPF7N60 Features

* 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 16 pF)

* 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

FQPF7N60_FairchildSemiconductor.pdf