Part number:
FQPF7N60
Manufacturer:
Fairchild Semiconductor
File Size:
454.68 KB
Description:
600v n-channel mosfet.
FQPF7N60_FairchildSemiconductor.pdf
Datasheet Details
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQPF7N60 Features
* 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 2.2 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
FQPF7N60_FairchildSemiconductor.pdf
Datasheet Details
FQPF7N60
Fairchild Semiconductor
454.68 KB
600v n-channel mosfet.
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