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FQPF7N80C, FQP7N80C Datasheet - Fairchild Semiconductor

FQP7N80C_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FQPF7N80C, FQP7N80C. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

FQPF7N80C, FQP7N80C

Manufacturer:

Fairchild Semiconductor

File Size:

871.30 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FQPF7N80C, FQP7N80C.
Please refer to the document for exact specifications by model.

FQPF7N80C, FQP7N80C, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF7N80C Features

* 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A

* Low Gate Charge (Typ. 27 nC)

* Low Crss (Typ. 10 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drai

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