Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A.
- Low Gate Charge (Typ. 27 nC).
- Low Crss (Typ. 10 pF).
- 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current.
FQP7N80C_FairchildSemiconductor.pdf