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FSB649 NPN Low Saturation Transistor

FSB649 Description

FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with c.

FSB649 Applications

* involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic FSB649 PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 500 250 mW °C/W Units © 1999 Fairchild Semiconductor Corporation fsb649.lwpPrNC revA

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Datasheet Details

Part number
FSB649
Manufacturer
Fairchild Semiconductor
File Size
30.60 KB
Datasheet
FSB649_FairchildSemiconductor.pdf
Description
NPN Low Saturation Transistor

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NPN Low Saturation Transistor Fairchild Semiconductor
Fairchild Semiconductor FSB649-like datasheet