FSB649 Datasheet - Fairchild Semiconductor

FSB649 NPN Low Saturation Transistor

FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB649 25 35 5 3 -55 to +150 Units V V V A °C Operating and Storage Junct.

FSB649_FairchildSemiconductor.pdf