G12N60C3D - HGTG12N60C3D

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Fairchild Semiconductor

Part number	G12N60C3D
Manufacturer	Fairchild Semiconductor
File Size	161.71 KB
Description	HGTG12N60C3D
Datasheet	G12N60C3D Datasheet
Additional preview pages of the G12N60C3D datasheet.

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching.

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Published: Jan 7, 2010 |