Datasheet Specifications
- Part number
- G12N60C3D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 161.71 KB
- Datasheet
- G12N60C3D_FairchildSemiconductor.pdf
- Description
- HGTG12N60C3D
Description
HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo.
Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in aG12N60C3D Distributors
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