Part number:
G12N60C3D
Manufacturer:
Fairchild Semiconductor
File Size:
161.71 KB
Description:
Hgtg12n60c3d.
G12N60C3D Datasheet (161.71 KB)
Datasheet Details
G12N60C3D Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
G12N60C3D Datasheet (161.71 KB)
Datasheet Details
G12N60C3D
Fairchild Semiconductor
161.71 KB
Hgtg12n60c3d.
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G12N60C3D Distributor
