G12N60C3D Datasheet - Fairchild Semiconductor

G12N60C3D_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

G12N60C3D

Manufacturer:

Fairchild Semiconductor

File Size:

161.71 KB

Description:

Hgtg12n60c3d.

G12N60C3D, HGTG12N60C3D

G12N60C3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

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G12N60C3D HGTG12N60C3D Fairchild Semiconductor

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