* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
G18N120BN Datasheet (135.35 KB)
G18N120BN
Fairchild Semiconductor
135.35 KB
hgtg18n120bn.
HGTG18N120BN
Data Sheet December 2001
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new .
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