G18N120BN Datasheet, Hgtg18n120bn, Fairchild Semiconductor

G18N120BN Features

• Hgtg18n120bn of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high vo

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G18N120BN

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Fairchild Semiconductor

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📄 Datasheet

Description:

hgtg18n120bn.

G18N120BN Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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G18N120BN

Fairchild Semiconductor

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