G18NP06Y N and P Channel Enhancement Mode Power MOSFET

Description

G18NP06Y N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: G18NP06Y
Manufacturer: GOFORD
File Size: 899.93 KB
Datasheet: G18NP06Y-GOFORD.pdf
Description: N and P Channel Enhancement Mode Power MOSFET

Features

* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V) 60V 18A < 35mΩ < 45mΩ Schematic diagram D1/D2
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -10V)
* RoHS Compliant -60V -18A < 45mΩ S1 G1 S2 G2 Marking and pin ass

G18NP06Y Distributors

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G18NP06Y and Channel Enhancement Mode Power MOSFET GOFORD

GOFORD G18NP06Y-like datasheet