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G18NP06Y - N and P Channel Enhancement Mode Power MOSFET

G18NP06Y Description

G18NP06Y N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

G18NP06Y Features

* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V) 60V 18A < 35mΩ < 45mΩ Schematic diagram D1/D2
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -10V)
* RoHS Compliant -60V -18A < 45mΩ S1 G1 S2 G2 Marking and pin ass

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Datasheet Details

Part number
G18NP06Y
Manufacturer
GOFORD
File Size
899.93 KB
Datasheet
G18NP06Y-GOFORD.pdf
Description
N and P Channel Enhancement Mode Power MOSFET

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