Datasheet Details
- Part number
- G18NP06Y
- Manufacturer
- GOFORD
- File Size
- 899.93 KB
- Datasheet
- G18NP06Y-GOFORD.pdf
- Description
- N and P Channel Enhancement Mode Power MOSFET
G18NP06Y Description
G18NP06Y N and P Channel Enhancement Mode Power MOSFET .
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
G18NP06Y Features
* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
60V 18A < 35mΩ
< 45mΩ
Schematic diagram
D1/D2
* PMOS
* VDS
* ID (at VGS = -10V)
* RDS(ON) (at VGS = -10V)
* RoHS Compliant
-60V -18A < 45mΩ
S1 G1 S2 G2
Marking and pin ass
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