GOFORD Datasheet | Specifications & PDF Download

GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate

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GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching perfor

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G400P06T P-Channel Enhancement Mode Power MOSFET Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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GT800N10L N-Channel Enhancement Mode Power MOSFET Description The GT800N10L uses advanced trench technology to provide excellent RDS(ON) , low gate

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GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate

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GT700P08D3 P-Channel Enhancement Mode Power MOSFET Description The GT700P08D3 uses advanced trench technology to provide excellent RDS(ON) , low gat

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G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char

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GT016N10TL N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gat

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GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit

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GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) ,

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GOFORD DESCRIPTION The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

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G30N03D3 N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char

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GT007N04TL N-Channel Enhancement Mode Power MOSFET Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gat

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GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gat

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G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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GOFORD Description The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate

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G65P06D5 P-Channel Enhancement Mode Power MOSFET Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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