GOFORD Datasheet | Specifications & PDF Download

GOFORD Description The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching perfor

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GT025N06AT N-Channel Enhancement Mode Power MOSFET Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gat

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G400P06T P-Channel Enhancement Mode Power MOSFET Description The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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GOFORD 431C FEATURES Programmable Output Voltage to 40V Low Dynamic Output Impedance 0.27 ppm/ DESCRIPTION The 431C is a three-terminal adjustable

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GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char

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GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate

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G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G050N06LL N-Channel Enhancement Mode Power MOSFET Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate

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G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha

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G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha

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GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) ,

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GOFORD 5P40 Description The 5P40 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and

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GOFORD Description The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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GOFORD DESCRIPTION The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

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G900P15D5 P-Channel Enhancement Mode Power MOSFET Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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GOFORD G1003B General Description The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate v

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G900P15D5 P-Channel Enhancement Mode Power MOSFET Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate

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GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) ,

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