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G05NP06 - N and P Channel Enhancement Mode Power MOSFET

Download the G05NP06 datasheet PDF. This datasheet also covers the G05NP06S2 variant, as both devices belong to the same n and p channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G05NP06S2-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G05NP06
Manufacturer GOFORD
File Size 1.01 MB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05NP06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G05NP06S2 N and P Channel Enhancement Mode Power MOSFET
G05NP10 N- and P-Channel Enhancement Mode Power MOSFET
G05NP10S N- and P-Channel Enhancement Mode Power MOSFET
G050N06LL N-Channel Enhancement Mode Power MOSFET
G050P03 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GOFORD G05NP06S2 N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ ⚫ PMOS ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ RoHS Compliant -60V -3.