Part G05NP06
Description N and P Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer GOFORD
Size 1.01 MB
GOFORD

G05NP06 Overview

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ
  • ID (at VGS = -10V)
  • RDS(ON) (at VGS = -10V)
  • RDS(ON) (at VGS = -4.5V)
  • RoHS Compliant