GOFORD G05NP06S2
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | G05NP06S2 |
|---|---|
| Datasheet | G05NP06S2 Download |
| Manufacturer | GOFORD |
| Description | N and P Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● NMOS● VDS
● ID (at VGS = 10V)
● RDS(ON) (at VGS = 10V)
● RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ
● PMOS
● VDS
● ID (at VGS = -10V)
● RDS(ON) (at VGS = -10V)
● RDS(ON) (at VGS = -4.5V)
● RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment Application
● Power switch
● DC/DC converters SOP-8 Device G05NP06S2 Package SOP-8双基 Marking G05NP06 Packaging 4000pcs/Reel
ABSOLUTE MAXIMUM RATINGS
TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg 60 -60 V 5 -3.1 A 20 -12.4 A ±20 ±20 V 2.5 1.9 W -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RthJA NMOS 50 PMOS 65 Unit ºC/W TEL：0755-29961263 FAX:0755-29961466 GOFORD G05NP06S2 NMOS Specifications TJ = 25ºC, unless otherwise noted...
