G05NP06S2 datasheet by GOFORD.
| Part number | G05NP06S2 |
|---|---|
| Datasheet | G05NP06S2-GOFORD.pdf |
| File Size | 1.01 MB |
| Manufacturer | GOFORD |
| Description | N and P Channel Enhancement Mode Power MOSFET |
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This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
| Part Number | Description |
|---|---|
| G05NP06 | N and P Channel Enhancement Mode Power MOSFET |
| G05NP10 | N- and P-Channel Enhancement Mode Power MOSFET |
| G05NP10S | N- and P-Channel Enhancement Mode Power MOSFET |
| G050N06LL | N-Channel Enhancement Mode Power MOSFET |
| G050P03 | P-Channel Enhancement Mode Power MOSFET |
| G050P03K | P-Channel Enhancement Mode Power MOSFET |
| G050P03S | P-Channel Enhancement Mode Power MOSFET |
| G050P03T | P-Channel Enhancement Mode Power MOSFET |
| G05P06 | P-Channel Enhancement Mode Power MOSFET |
| G05P06L | P-Channel Enhancement Mode Power MOSFET |
