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G05NP06S2 Datasheet N And P Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Overview: GOFORD G05NP06S2 N and P Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number G05NP06S2
Manufacturer GOFORD
File Size 1.01 MB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet G05NP06S2-GOFORD.pdf

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment.

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