G05NP06S2 - N and P Channel Enhancement Mode Power MOSFET

Product Overview

Part number	G05NP06S2
Manufacturer	GOFORD
File Size	1.01 MB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G05NP06S2 Datasheet
Additional preview pages of the G05NP06S2 datasheet.

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment.

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Published: Nov 21, 2024 |