G05NP06S2 Datasheet PDF - GOFORD N and P Channel Enhancement Mode Power MOSFET Specs

G05NP06S2 - N and P Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RoHS Compliant -60V -3.1A < 80mΩ < 95mΩ Schematic diagram Marking and pin assignment.

Datasheet Details

Part number	G05NP06S2
Manufacturer	GOFORD
File Size	1.01 MB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G05NP06S2 Datasheet
Additional preview pages of the G05NP06S2 datasheet.

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Full PDF Text Transcription

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GOFORD G05NP06S2 N and P Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ⚫ NMOS ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.5V) 60V 5A < 36mΩ < 40mΩ ⚫ PMOS ⚫ VDS ⚫ ID (at VGS = -10V) ⚫ RDS(ON) (at VGS = -10V) ⚫ RDS(ON) (at VGS = -4.5V) ⚫ RoHS Compliant -60V -3.

Published: Nov 21, 2024 |