Datasheet4U.com

G05P06L Datasheet PDF

GOFORD G05P06L

The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G05P06L
Datasheet G05P06L Download
Manufacturer GOFORD
Description P-Channel Enhancement Mode Power MOSFET
Buy Stock & Price
G05P06L datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 80mΩ < 90mΩ Schematic diagram Application l Power switch l DC/DC converters SOT-23-3L Ordering Information Device G05P06L Package SOT-23-3L Marking G05P06

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RthJA TEL:0755-29961263 Packaging 3000pcs/Reel Value Unit -60 V -5 A -20 A ±20 V 2.6 W -55 To 150 ºC Value 48 Unit ºC/W FAX:0755-29961466(A1477) G05P06L Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Parameters Drain-Source Breakdown Voltage Zero Gate...
G05P06L page 2 preview G05P06L page 3 preview