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G05P06L - P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 80mΩ < 90mΩ Schematic diagram.

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Datasheet preview – G05P06L

Datasheet Details

Part number G05P06L
Manufacturer GOFORD
File Size 813.86 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05P06L Datasheet
Additional preview pages of the G05P06L datasheet.

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Full PDF Text Transcription

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G05P06L P-Channel Enhancement Mode Power MOSFET Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
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