G05P06L Description
The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G05P06L Key Features
- 60V -5A < 80mΩ < 90mΩ
- Part: G05P06L
- Manufacturer: GOFORD
- Size: 813.86 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G05P06 | P-Channel Enhancement Mode Power MOSFET |
| G050N06LL | N-Channel Enhancement Mode Power MOSFET |
| G050P03 | P-Channel Enhancement Mode Power MOSFET |
| G050P03K | P-Channel Enhancement Mode Power MOSFET |
| G050P03S | P-Channel Enhancement Mode Power MOSFET |