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G05P06L - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 80mΩ < 90mΩ Schematic diagram.

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Datasheet Details

Part number G05P06L
Manufacturer GOFORD
File Size 813.86 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05P06L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G05P06L P-Channel Enhancement Mode Power MOSFET Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.