G05P06L Overview
The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G05P06L Key Features
- 60V -5A < 80mΩ < 90mΩ
P-channel Enhancement Mode Power MOSFET
| Part number | G05P06L |
|---|---|
| Manufacturer | GOFORD |
| File Size | 813.86 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet | G05P06L-GOFORD.pdf |
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The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G05P06 | P-Channel Enhancement Mode Power MOSFET |
| G050N06LL | N-Channel Enhancement Mode Power MOSFET |
| G050P03 | P-Channel Enhancement Mode Power MOSFET |
| G050P03K | P-Channel Enhancement Mode Power MOSFET |
| G050P03S | P-Channel Enhancement Mode Power MOSFET |
| G050P03T | P-Channel Enhancement Mode Power MOSFET |
| G05NP06 | N and P Channel Enhancement Mode Power MOSFET |
| G05NP06S2 | N and P Channel Enhancement Mode Power MOSFET |
| G05NP10 | N- and P-Channel Enhancement Mode Power MOSFET |
| G05NP10S | N- and P-Channel Enhancement Mode Power MOSFET |