G05P06L Overview
Description
The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part | G05P06L |
|---|---|
| Description | P-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | GOFORD |
| Size | 813.86 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |