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G05P06 - P-Channel Enhancement Mode Power MOSFET

Download the G05P06 datasheet PDF. This datasheet also covers the G05P06L variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -60V -5A < 80mΩ < 90mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G05P06L-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G05P06
Manufacturer GOFORD
File Size 813.86 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G05P06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G05P06L P-Channel Enhancement Mode Power MOSFET
G050N06LL N-Channel Enhancement Mode Power MOSFET
G050P03 P-Channel Enhancement Mode Power MOSFET
G050P03K P-Channel Enhancement Mode Power MOSFET
G050P03S P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G05P06L P-Channel Enhancement Mode Power MOSFET Description The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.