8N50F - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 500V 8A < 900mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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8N50F N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – 8N50F

Datasheet Details

Part number	8N50F
Manufacturer	GOFORD
File Size	864.10 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	8N50F Datasheet
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8N50F N-Channel Enhancement Mode Power MOSFET Description The 8N50F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Published: Nov 13, 2024 |