8N50F
Description
The 8N50F uses advanced trench technology to provide excellent RDS(ON) , low gate charge.
Key Features
- l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 500V 8A < 900mΩ l 100% Avalanche Tested l RoHS pliant
- Part: 8N50F
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: GOFORD
- Size: 864.10 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 8N50NZ | Fairchild Semiconductor | N-Channel MOSFET |
| 8N50 | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 8N50 | Inchange Semiconductor | N-Channel MOSFET Transistor |
| 8N50H | Unisonic Technologies | N-CHANNEL POWER MOSFET |
| 8N55 | Inchange Semiconductor | N-Channel MOSFET Transistor |