Datasheet4U.com

G30N02 - N-Channel MOSFET

Product Overview

📥 Download Datasheet

G30N02 N-Channel MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G30N02

Datasheet Details

Part number	G30N02
Manufacturer	GOFORD
File Size	1.63 MB
Description	N-Channel MOSFET
Datasheet	G30N02 Datasheet
Additional preview pages of the G30N02 datasheet.

Product details

Description

The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.
RoHS Compliant.

📁 Similar Datasheet

G30N60A4D - SMPS Series N-Channel IGBT (Fairchild Semiconductor)
G30N60B3 - NPT IGBT (Fairchild Semiconductor)
G30N60B3D - N-Channel IGBT (Fairchild Semiconductor)
G30N60C3D - N-Channel IGBT (Intersil Corporation)
G30N60HS - High Speed IGBT (Infineon)
G30 - Voltage-Controlled Attenuator Module (MACOM)
G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

Other Datasheets by GOFORD

G30N03 - N-Channel Trench MOSFET
G30N03D3 - N-Channel Trench MOSFET
G30N04 - N-Channel Enhancement Mode Power MOSFET
G30N04D3 - N-Channel Enhancement Mode Power MOSFET
G300N04 - N-Channel Enhancement Mode Power MOSFET
G300N04D3 - N-Channel Enhancement Mode Power MOSFET

Published: Oct 26, 2024 |