G30N02
G30N02 is N-Channel MOSFET manufactured by GOFORD.
GOFORD
Description
The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDSS RDS(ON) ID
@4.5V (Typ)
20V 10.5mΩ 30 A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Ro HS pliant
Application
- Power switching application
- Load switching
- LED power supply
Schematic diagram
Marking and pin assignment
Ordering Information
Part Number G30N02K G30N02T
Marking G30N02 G30N02
Case TO-252...
