G30N02 - N-Channel MOSFET

General Description

The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDSS RDS(ON) ID @4.5V (Typ) 20V 10.5mΩ 30 A.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.
RoHS Compliant.

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G30N02 n-channel mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G30N02
Manufacturer	GOFORD
File Size	1.63 MB
Description	N-Channel MOSFET
Datasheet	G30N02 Datasheet

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Part Number	Description
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GOFORD Description The G30N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @4.5V (Typ) 20V 10.