G30N03D3 - N-Channel Trench MOSFET

General Description

The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 30V 30A < 7mΩ < 12mΩ.

📥 Download Datasheet

G30N03D3 n-channel trench mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G30N03D3
Manufacturer	GOFORD
File Size	612.74 KB
Description	N-Channel Trench MOSFET
Datasheet	G30N03D3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
G30N60A4D	SMPS Series N-Channel IGBT	Fairchild Semiconductor
G30N60B3	NPT IGBT	Fairchild Semiconductor
G30N60B3D	N-Channel IGBT	Fairchild Semiconductor
G30N60C3D	N-Channel IGBT	Intersil Corporation
G30N60HS	High Speed IGBT	Infineon

Other Datasheets by GOFORD

Part Number	Description
G30N03	N-Channel Trench MOSFET
G30N02	N-Channel MOSFET
G30N04	N-Channel Enhancement Mode Power MOSFET
G30N04D3	N-Channel Enhancement Mode Power MOSFET
G300N04	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G30N03D3 N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.