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G30N03 - N-Channel Trench MOSFET

This page provides the datasheet information for the G30N03, a member of the G30N03D3 N-Channel Trench MOSFET family.

Datasheet Summary

Description

The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 30V 30A < 7mΩ < 12mΩ.

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Datasheet preview – G30N03

Datasheet Details

Part number G30N03
Manufacturer GOFORD
File Size 612.74 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet G30N03 Datasheet
Additional preview pages of the G30N03 datasheet.

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Full PDF Text Transcription

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G30N03D3 N-Channel Enhancement Mode Power MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.
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