Part G30N04
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer GOFORD
Size 727.50 KB
G30N04 Datasheet (PDF) Download
Pricing from 0.93 USD, available from DigiKey and LCSC.
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GOFORD

G30N04 Overview

Key Specifications

Description

The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 40V 30A < 9mΩ < 12mΩ
G30N04 datasheet preview

Price & Availability

Seller Inventory Price Breaks Buy
DigiKey 258 1+ : 0.93 USD
10+ : 0.579 USD
100+ : 0.3768 USD
500+ : 0.28952 USD		 View Offer
DigiKey 258 1+ : 0.93 USD
10+ : 0.579 USD
100+ : 0.3768 USD
500+ : 0.28952 USD		 View Offer

Related Datasheets

Part Number Manufacturer Description
A2SHB HAOHAI N-Channel MOSFET
AP9563GH Advanced Power Electronics Corp P-CHANNEL ENHANCEMENT MODE POWER MOSFET
FCPF360N65S3R0L onsemi N-Channel MOSFET