G30N04 Description
The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G30N04
- Manufacturer: GOFORD
- Size: 727.50 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G30N04D3 | N-Channel Enhancement Mode Power MOSFET |
| G30N02 | N-Channel MOSFET |
| G30N03 | N-Channel Trench MOSFET |
| G30N03D3 | N-Channel Trench MOSFET |
| G300N04 | N-Channel Enhancement Mode Power MOSFET |