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G30N04 - N-Channel Enhancement Mode Power MOSFET

Download the G30N04 datasheet PDF. This datasheet also covers the G30N04D3 variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 40V 30A < 9mΩ < 12mΩ Schematic diagram pin assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G30N04D3-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G30N04
Manufacturer GOFORD
File Size 727.50 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G30N04 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G30N04D3 N-Channel Enhancement Mode Power MOSFET
G30N02 N-Channel MOSFET
G30N03 N-Channel Trench MOSFET
G30N03D3 N-Channel Trench MOSFET
G300N04 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G30N04D3 N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.