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G050P03K Datasheet PDF

GOFORD G050P03K

The G050P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G050P03K
Datasheet G050P03K Download
Manufacturer GOFORD
Description P-Channel Enhancement Mode Power MOSFET
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G050P03K datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -30V -85A < 4.5mΩ < 6mΩ Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device G050P03K Package TO-252 Marking G050P03 TO-252 Packaging 2500pcs/Reel

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range (note1) (note2) VDS ID IDM VGS PD EAS TJ, Tstg -30 V -85 A -340 A ±20 V 100 W 225 mJ -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case Symbol RthJA RthJC Value 50 1.25 Unit ºC/W ºC/W TEL:0755-29961263 FAX:0755-29961466(A1707-V1.0) G050P03K Specifications TJ = 25ºC, unless otherwise no...
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