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G050P03S - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -30V -25A < 5.5mΩ < 7mΩ Schematic diagram.

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Datasheet preview – G050P03S

Datasheet Details

Part number G050P03S
Manufacturer GOFORD
File Size 578.00 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G050P03S Datasheet
Additional preview pages of the G050P03S datasheet.

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G050P03S P-Channel Enhancement Mode Power MOSFET Description The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -30V -25A < 5.
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