G050P03S Overview
The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G050P03S Key Features
- 30V -25A < 5.5mΩ < 7mΩ
G050P03S datasheet by GOFORD.
| Part number | G050P03S |
|---|---|
| Datasheet | G050P03S-GOFORD.pdf |
| File Size | 578.00 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| G050P03 | P-Channel Enhancement Mode Power MOSFET |
| G050P03K | P-Channel Enhancement Mode Power MOSFET |
| G050P03T | P-Channel Enhancement Mode Power MOSFET |
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| G05NP10S | N- and P-Channel Enhancement Mode Power MOSFET |
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| G05P06L | P-Channel Enhancement Mode Power MOSFET |