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GT013N04 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT013N04, a member of the GT013N04T N-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 40V 220A < 2.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT013N04

Datasheet Details

Part number GT013N04
Manufacturer GOFORD
File Size 949.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT013N04 Datasheet
Additional preview pages of the GT013N04 datasheet.

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Full PDF Text Transcription

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GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 40V 220A < 2.
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