GT013N04 Overview
The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT013N04 Details
| Part number | GT013N04 |
|---|---|
| Datasheet | GT013N04 GT013N04T Datasheet (PDF) |
| File Size | 949.12 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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