GT013N04T - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 40V 220A < 2.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

GT013N04T n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	GT013N04T
Manufacturer	GOFORD
File Size	949.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT013N04T Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
GT0001	1000 Base CX Transformer Modules	BESTJOB
GT0002	1000 Base CX Transformer Modules	BESTJOB
GT02F16	High Voltage Silicon Rectifier Diode	HVGT
GT04	Gate Drive Transformer	ice Components
GT04-111	Gate Drive Transformer	ice Components

Other Datasheets by GOFORD

Part Number	Description
GT013N04	N-Channel Enhancement Mode Power MOSFET
GT015N06	N-Channel Enhancement Mode Power MOSFET
GT015N06TL	N-Channel Enhancement Mode Power MOSFET
GT016N10	N-Channel Enhancement Mode Power MOSFET
GT016N10	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

GT013N04T N-Channel Enhancement Mode Power MOSFET Description The GT013N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 40V 220A < 2.