GT015N06 Overview
The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
N-channel Enhancement Mode Power MOSFET
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT015N06 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 934.13 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | GT015N06 GT015N06TL Datasheet (PDF) |
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The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GT015N06TL | N-Channel Enhancement Mode Power MOSFET |
| GT013N04 | N-Channel Enhancement Mode Power MOSFET |
| GT013N04T | N-Channel Enhancement Mode Power MOSFET |
| GT016N10 | N-Channel Enhancement Mode Power MOSFET |
| GT016N10 | N-Channel Enhancement Mode Power MOSFET |
| GT016N10Q | N-Channel Enhancement Mode Power MOSFET |
| GT016N10TL | N-Channel Enhancement Mode Power MOSFET |
| GT007N04 | N-Channel Enhancement Mode Power MOSFET |
| GT007N04TL | N-Channel Enhancement Mode Power MOSFET |
| GT023N10 | N-Channel Enhancement Mode Power MOSFET |