Datasheet4U Logo Datasheet4U.com

GT015N06TL - N-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 350A < 1mΩ < 1.3mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram D.

📥 Download Datasheet

Datasheet Details

Part number GT015N06TL
Manufacturer GOFORD
File Size 934.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT015N06TL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GT0001 1000 Base CX Transformer Modules BESTJOB
GT0002 1000 Base CX Transformer Modules BESTJOB
GT02F16 High Voltage Silicon Rectifier Diode HVGT
GT04 Gate Drive Transformer ice Components
GT04-111 Gate Drive Transformer ice Components

Other Datasheets by GOFORD

Part Number Description
GT015N06 N-Channel Enhancement Mode Power MOSFET
GT013N04 N-Channel Enhancement Mode Power MOSFET
GT013N04T N-Channel Enhancement Mode Power MOSFET
GT016N10 N-Channel Enhancement Mode Power MOSFET
GT016N10 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT015N06TL N-Channel Enhancement Mode Power MOSFET Description The GT015N06TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 350A < 1mΩ < 1.