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GT016N10 - N-Channel Enhancement Mode Power MOSFET

Download the GT016N10 datasheet PDF. This datasheet also covers the GT016N10Q variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 288A < 2.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT016N10Q-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT016N10
Manufacturer GOFORD
File Size 967.97 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT016N10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT016N10 N-Channel Enhancement Mode Power MOSFET
GT016N10Q N-Channel Enhancement Mode Power MOSFET
GT016N10TL N-Channel Enhancement Mode Power MOSFET
GT013N04 N-Channel Enhancement Mode Power MOSFET
GT013N04T N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 288A < 2.