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GT016N10Q - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 288A < 2.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT016N10Q

Datasheet Details

Part number GT016N10Q
Manufacturer GOFORD
File Size 967.97 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT016N10Q Datasheet
Additional preview pages of the GT016N10Q datasheet.

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Full PDF Text Transcription

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GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 288A < 2.
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