Datasheet4U.com

GT016N10Q - N-Channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

GT016N10Q N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT016N10Q

Datasheet Details

Part number	GT016N10Q
Manufacturer	GOFORD
File Size	967.97 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT016N10Q Datasheet
Additional preview pages of the GT016N10Q datasheet.

Product details

Description

The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 288A < 2.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📁 Similar Datasheet

GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
GT04 - Gate Drive Transformer (ice Components)
GT04-111 - Gate Drive Transformer (ice Components)
GT04-122 - Gate Drive Transformer (ice Components)

Other Datasheets by GOFORD

GT016N10 - N-Channel Enhancement Mode Power MOSFET
GT016N10 - N-Channel Enhancement Mode Power MOSFET
GT016N10TL - N-Channel Enhancement Mode Power MOSFET
GT013N04 - N-Channel Enhancement Mode Power MOSFET
GT013N04T - N-Channel Enhancement Mode Power MOSFET
GT015N06 - N-Channel Enhancement Mode Power MOSFET

Published: Nov 14, 2024 |