G65P06 Description
The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G65P06 Key Features
- 60V -65A < 20mΩ
- Part: G65P06
- Manufacturer: GOFORD
- Size: 644.92 KB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G65P06D5 | P-Channel Enhancement Mode Power MOSFET |