G65P06 Overview
The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G65P06 Key Features
- 60V -65A < 20mΩ
Datasheet Details
| Part number | G65P06 |
|---|---|
| Datasheet | G65P06 G65P06D5 Datasheet (PDF) |
| File Size | 644.92 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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